Light-emitting diode and method for fabrication thereof

Details Light-emitting diode and method for fabrication thereof Light-emitting diode and method for fabrication thereof

2011-01-04

2011-01-04

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S079000, C257S080000, C257S094000, C257S103000, C257SE33005, C257SE33008, C257SE33069, C438S022000, C438S047000

Reexamination Certificate

active

07863630

ABSTRACT:
A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.

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