Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-03-29
2011-03-29
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S094000, C257SE33002, C257SE33005, C257SE33006, C438S022000, C438S024000, C438S025000, C438S046000
Reexamination Certificate
active
07915619
ABSTRACT:
A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.
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Foreign Office Action for Taiwanese Patent Application No. 095148554, mailed Jun. 23, 2010.
Nabekura Wataru
Takeuchi Ryouichi
Lee Hsien-Ming
Showa Denko K.K.
Sughrue & Mion, PLLC
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