Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-08-30
2011-08-30
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257S100000
Reexamination Certificate
active
08008679
ABSTRACT:
A light emitting diode and methods of forming the same are provided. The light emitting diode includes an epitaxy chip having a first substrate, a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer on the first substrate; a second substrate holding the epitaxy chip; an isolation layer on the second substrate, the isolation layer having a first portion connecting to one side of the epitaxy chip and a second portion connecting to another side of the epitaxy chip; a first electrode on the first portion of the isolation layer; and a second electrode on the second portion of the isolation layer, wherein the first electrode and the second electrode respectively and electrically connect to the first conductive semiconductor layer and the second conductive semiconductor layer.
REFERENCES:
patent: 4280273 (1981-07-01), Vincent
patent: 5181084 (1993-01-01), Bommer et al.
patent: 2005/0224822 (2005-10-01), Liu
patent: 2007/0278502 (2007-12-01), Shakuda et al.
Huga Optotech Inc.
Snell & Wilmer L.L.P.
Tran Tan N
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