Light emitting diode and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S079000, C257SE21001, C257SE33001, C257SE33005, C257SE33060, C257SE33062, C257SE33072, C257SE33073, C438S029000, C438S069000, C438S072000, C438S074000

Reexamination Certificate

active

08076686

ABSTRACT:
A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.

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