Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-03-10
2011-12-13
Gurley, Lynne (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257SE21001, C257SE33001, C257SE33005, C257SE33060, C257SE33062, C257SE33072, C257SE33073, C438S029000, C438S069000, C438S072000, C438S074000
Reexamination Certificate
active
08076686
ABSTRACT:
A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
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Chen Wei-Shou
Ko Tsun-Kai
Ku Yi-Wen
Kuo Cheng-Ta
Lin An-Ru
Bacon & Thomas PLLC
Epistar Corporation
Gurley Lynne
Li Meiya
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