Light-emitting diode and manufacturing method thereof

Details Light-emitting diode and manufacturing method thereof Light-emitting diode and manufacturing method thereof

2005-09-22

2008-10-07

Toledo, Fernando L (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C257SE33065, C257SE33068

Reexamination Certificate

active

07432117

ABSTRACT:
A light-emitting diode and the manufacturing method thereof are provided, wherein the light-emitting diode comprises an epitaxial structure, a bonding layer and a composite substrate. The bonding layer located over one side of the epitaxial structure is used for adhering the composite substrate to the epitaxial structure. The composite substrate comprises a patterned silicon layer penetrated through by a plurality of openssilicon, and a metal layer covering the patterned silicon layer, wherein a portion of the metal layer is filled into the opens and contacts the bonding layer.

REFERENCES:
patent: 6420732 (2002-07-01), Kung et al.
patent: 6642072 (2003-11-01), Inoue et al.
patent: 2006/0006404 (2006-01-01), Ibbetson et al.
patent: 2006/0261364 (2006-11-01), Suehiro et al.
patent: 2006/0284195 (2006-12-01), Nagai et al.
patent: 2007/0152226 (2007-07-01), Salam
patent: 2007/0181895 (2007-08-01), Nagai

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