Light emitting diode and manufacturing method thereof

Details Light emitting diode and manufacturing method thereof Light emitting diode and manufacturing method thereof

2011-01-18

2011-01-18

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S098000, C257S099000, C257S466000, C257SE33001

Reexamination Certificate

active

07872267

ABSTRACT:
A light emitting diode comprises a substrate having a first surface and a second surface, a light emitting epitaxy structure placed on the first surface of the substrate, and a compound reflection layer placed on the second surface of the substrate. The second surface of the substrate further has a protection structure.

REFERENCES:
patent: 2001/0033135 (2001-10-01), Duggal et al.
patent: 2006/0163606 (2006-07-01), Wierer et al.
patent: 2006/0234408 (2006-10-01), Lee et al.
patent: 2007/0284604 (2007-12-01), Slater et al.
patent: 2010/0117107 (2010-05-01), Yuan et al.
patent: 1744335 (2006-03-01), None
Office Action dated Aug. 4, 2010 for 200710302032.7, which is a Chinese counterpart application, that cites CN1744335A.

Affiliated with

Also associated with

Rating

Light emitting diode and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting diode and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diode and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2660499