Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-03-01
2011-03-01
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S712000, C257S774000, C257SE33056, C257SE33062
Reexamination Certificate
active
07897991
ABSTRACT:
A light emitting diode includes a base, a first and second conductive members through the base and a light emitting diode chip on the base. The light emitting diode chip includes an upper surface, a bottom surface, a first sidewall and a second sidewall. The first sidewall and the second sidewall interconnect the upper surface and bottom surface. A first and second heat dissipating layers are respectively located on the first and second sidewalls. The first and second heat dissipating layers connect with the first and second conductive members, respectively. A bottom face of the chip electrically and thermally connects with the second conductive member. A gold wire electrically connects an electrode on a top face of the chip and the first heat dissipating layer.
REFERENCES:
patent: 2008/0303157 (2008-12-01), Cheng et al.
Foxconn Technology Co., Ltd.
Mandala Victor
Niranjan Frank R.
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