Light-emitting diode and its manufacturing method

Details Light-emitting diode and its manufacturing method Light-emitting diode and its manufacturing method

2006-07-11

2006-07-11

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S086000, C257S094000, C257S102000

Reexamination Certificate

active

07075120

ABSTRACT:
It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light emitting side of the light emitting part, so that the generation of hillocks is effectively inhibited and the brightness of the light emitting diode is increased.

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 6433364 (2002-08-01), Hosoba et al.
patent: 2001/0050530 (2001-12-01), Murakami et al.
patent: 4-229665 (1992-08-01), None
patent: 6-103759 (1994-12-01), None
patent: 11-17218 (1999-01-01), None

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