Light emitting diode

Details Light emitting diode Light emitting diode

1978-08-25

1980-01-15

Edlow, Martin H.

Oscillators

Relaxation oscillators

357 18, 357 16, 331 945H, H01L 3300

Patent

active

041841700

ABSTRACT:
An LED in which the recombination region is comprised of a first layer which is degenerately doped (.apprxeq.10.sup.19 /cm.sup.3) and a second layer which is less degenerately doped (.apprxeq.3.times.10.sup.18 /cm.sup.3). The reduced doping of the second layer provides a depletion region which is wider than the depletion region of conventional LED's whereby carrier tunneling (and non-radiative recombination from such tunneling) is reduced. The second layer is only as thick as necessary (.apprxeq.150A) to reduce tunneling (excess current) significantly which permits substantial radiation by improved carrier injection into the first (heavily doped) portion. The heavy doping of the first layer allows the LED to respond very quickly to switching signals whereby improved light output is achieved with a great reduction in non-radiative recombination due to tunneling.

REFERENCES:
patent: 4016505 (1977-04-01), Itoh
patent: 4077019 (1978-02-01), Streifer
patent: 4132960 (1979-02-01), Streifer

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