Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2001-02-16
2002-08-06
Flynn, Nathan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S098000, C257S100000, C257S431000, C257S434000, C257S680000
Reexamination Certificate
active
06429464
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a light emitting diode, and more particularly to a light emitting diode having enhanced radiation effect and light-emitting efficiency.
2. Description of Related Prior Art
A conventional vertical-type light emitting diode, as shown in
FIG. 1
, includes a frame A
2
on which a bowl portion is formed for receiving a chip A
1
therein. The frame A
2
has two extended leads, at lower ends of which the frame A
2
is soldered onto a printed circuit board A
4
at soldering points A
3
. This type of conventional light emitting diode has relatively deep bowl portion that facilitates to enhanced light-emitting efficiency. However, it uses only one of the two leads to radiate heat and therefore has inferior radiation efficiency. It is theoretically known that the radiation effect is in proportion to the light-emitting efficiency. The poorer the radiation effect is, the poorer the light-emitting efficiency is. The vertical-type light emitting diode shown in
FIG. 1
has poor radiation effect and therefore needs improvement.
FIG. 2
illustrates another conventional light emitting diode that includes a frame B
2
for holding a chip B
1
thereon. The frame B
2
has increased width and leads having increased diameter, compared with the frame A
2
shown in FIG.
1
. The leads are also soldered onto a printed circuit board B
4
at soldering points B
3
. In this type of conventional light emitting diode, the width-increased frame B
2
enables a reduced overall height of the light emitting diode, and both the two leads are used to radiate heat to provide an enhanced radiating capacity. However, the frame B
2
is thin in its thickness and the bowl portion on the frame B
2
has a relatively small depth of about 0.4 mm that is smaller than the bowl portion on the frame A
2
for the vertical-type light emitting diode of FIG.
1
. Since the depth of the bowl portion also has connection with the light-emitting efficiency, there is limitation in the light-emitting efficiency of the light emitting diode of FIG.
2
and an improvement on it is desired.
It is therefore tried by the inventor to develop a light emitting diode that has relatively deep bowl portion and increased radiation and light-emitting efficiency.
SUMMARY OF THE INVENTION
A primary object of the present invention is to provide a light emitting diode that has relatively deep bowl portion and increased radiation and light-emitting efficiency. To achieve the above and other objects, the light emitting diode of the present invention includes a frame having an increased thickness to enable the bowl portion formed thereon to have a depth more than 0.6 mm to provide enhanced light-emitting efficiency. The frame also includes leads downward extended from the frame and radiating blocks provided at or close to a bottom of the frame to increase the radiation efficiency. The light emitting diode of the present invention further includes a layer of radiation-enhancing material over bottoms of the frame and the radiating blocks to enhance the radiating capacity of the light emitting diode. In the present invention, the frame and the radiating blocks or the layer of radiation-enhancing material is connected to and in direct contact with the printed circuit board to further increase the radiating area of the light emitting diode.
REFERENCES:
patent: 5001609 (1991-03-01), Gardner et al.
patent: 6121637 (2000-09-01), Isokawa et al.
patent: 58222578 (1983-12-01), None
Flynn Nathan
Forde Remmon R.
Para Light Electronics Co. Ltd.
Rosenberg , Klein & Lee
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