Light-emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated

Reexamination Certificate

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Details

C257S079000, C257S098000, C257SE33057, C257SE33059, C257SE33066, C438S025000, C438S026000, C438S029000

Reexamination Certificate

active

07982238

ABSTRACT:
A light-emitting diode (LED) is provided, wherein the LED comprises an epitaxial structure, a bonding layer and a composite substrate. The composite substrate comprises a patterned substrate having a pattern and a conductive material layer disposed around the patterned substrate. The bonding layer is formed on the composite substrate. The epitaxial structure is formed on the bonding layer.

REFERENCES:
patent: 6420732 (2002-07-01), Kung et al.
patent: 6642072 (2003-11-01), Inoue et al.
patent: 2006/0006404 (2006-01-01), Ibbetson et al.
patent: 2006/0261364 (2006-11-01), Suehiro et al.
patent: 2006/0284195 (2006-12-01), Nagai
patent: 2007/0152226 (2007-07-01), Salam
patent: 2007/0181895 (2007-08-01), Nagai

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