Light emitting diode

Details Light emitting diode Light emitting diode

2011-07-19

2011-07-19

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257SE33068

Reexamination Certificate

active

07982207

ABSTRACT:
A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.

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Notice of Allowance dated Oct. 13, 2010, issued in U.S. Appl. No. 12/203,762.

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