Light emitting diode

Details Light emitting diode Light emitting diode

2011-01-04

2011-01-04

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257SE33068

Reexamination Certificate

active

07863599

ABSTRACT:
A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.

REFERENCES:
patent: 7109048 (2006-09-01), Ha et al.
patent: 7166483 (2007-01-01), Liu et al.
patent: 7279751 (2007-10-01), Ueda et al.
patent: 7786502 (2010-08-01), Sakai
patent: 2008/0179605 (2008-07-01), Takase et al.
patent: 10-0721515 (2007-05-01), None

Affiliated with

Also associated with

Rating

Light emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2662475