Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2011-06-07
2011-06-07
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S013000, C257SE33013
Reexamination Certificate
active
07956369
ABSTRACT:
A light emitting device comprising: a polar template; a p-type layer grown thereon; the p-type layer having a first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a second polarization vector that is larger than the first polarization vector; the n-type layer and p-type layer forming an interface. Another preferred embodiment light emitting device comprises a polar template; an n-type layer grown on the template; the n-type layer having a first polarization vector having a first projection relative to a growth direction; a p-type layer grown on the n-type layer having a second polarization vector that is larger than the first polarization vector. In both embodiments, the first polarization vector in the p-layer and second polarization vector in the n-layer create discontinuity at the interface resulting in a negative charge appearing at the interface.
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Reed Meredith L.
Shen Paul
Wraback Michael
Anderson Lawrence E.
Mandala Victor
Stowe Scott
The United States of America as represented by the Secretary of
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