Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1992-10-30
1994-07-12
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 77, 257102, 257613, 257656, 257657, H01L 3300
Patent
active
053291417
ABSTRACT:
A light emitting diode of silicon carbide having a p-n junction comprising an n-type layer doped with donor impurities, a first p-type layer doped with acceptor impurities, and a second p-type layer doped with acceptor impurities and donor impurities. The first p-type layer has a thickness less than the diffusion length of electrons having flowed from the n-type layer. In this way, the first p-type layer effects light emission related to the acceptor impurities which recombine with the electrons having flowed from the n-type layer, and the second p-type layer effects light emission by donor-acceptor pairs which recombine with the electrons having flowed from the n-type layer.
REFERENCES:
patent: 4918497 (1990-04-01), Edmond
patent: 5027168 (1991-06-01), Edmond
U.S. Patent Application Serial No. 07/702,819 (filed on May 17, 1991). A copy is not included herewith.
Ikeda et al., "Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms" J. Appl. Phys. (1979) 50(12):8215-8225-Apr. 1979.
Matsushita et al., "SiC pn junction blue light-emitting diode" Japan Society of Applied Physics (1991) 60(2):159-162. A partial English translation is also enclosed. Feb. 1991.
Suzuki et al., "Effects of the junction interface properties on blue emissions of SiC blue LEDs grown by step-controlled CVD" Journal of Crystal Growth (1991) 115:623-627. The corresponding abstract, namely Abstracts ICVGE-7 (The 7th International Conference on Vapour Growth and Epitaxy) (Jul. 14-17, 1991) Nagoya, Japan, p. 111, is also enclosed herewith.
Matsunami et al., "Bulk crystal growth of SiC on 3C-SiC substrates and application to step-controlled epitaxy" Electronics Information Communcations Society, Electronic Components and Materials Study Group, Study Report, CPM90-64 (Oct. 26, 1990) 90(277)29-34. A partial English translation is also included.
Fujii Yoshihisa
Furukawa Katsuki
Saito Hajime
Suzuki Akira
Tajima Yoshimitsu
Sharp Kabushiki Kaisha
Wojciechowicz Edward
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