Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2009-08-13
2011-12-13
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257SE25032
Reexamination Certificate
active
08076689
ABSTRACT:
A light emitting diode includes an epitaxial layer, an electrode, electrically conductive members, a light incident layer, a light reflecting layer, an adhesive, and an electrically conductive permanent substrate. The epitaxial layer has first and second surfaces. The electrode is disposed on the second surface of the epitaxial layer. The electrically conductive members are formed on the first surface of the epitaxial layer and are spaced apart from each other. The light incident layer is formed on the first surface of the epitaxial layer at regions where none of the electrically conductive members are formed. The light reflecting layer is formed on the light incident layer and the electrically conductive members, and has indented parts and non-indented parts. The adhesive is disposed in the indented parts of the light reflecting layer. The permanent substrate is bonded to the light reflecting layer through the adhesive and through wafer bonding.
REFERENCES:
patent: 2006/0284195 (2006-12-01), Nagai
Horng Ray-Hua
Wuu Dong-Sing
Foley & Hoag LLP
Horng Ray-Hua
Pert Evan
Vallabh Rajesh
Wilson Scott R
LandOfFree
Light emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4297479