Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-07-23
2010-06-22
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C438S029000
Reexamination Certificate
active
07741651
ABSTRACT:
A light emitting diode includes a base, a light emitting chip, and a wavelength converting layer. The base is formed with a recessed portion that has a bottom wall surface, and a side wall surface extending upwardly from the bottom wall surface and cooperating with the bottom wall surface to define a receiving space. The light emitting chip is provided on the bottom wall surface of the receiving space, and has a top chip surface disposed below a top surface of the base, and a peripheral chip surface extending downwardly from the top chip surface and being substantially parallel to and forming a gap with the side wall surface of the recessed portion. The wavelength converting layer is filled in the receiving space in the recessed portion so as to cover the top chip surface and the peripheral chip surface of the light emitting chip.
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patent: 6650044 (2003-11-01), Lowery
patent: 2006/0082296 (2006-04-01), Chua et al.
patent: 2007/0102717 (2007-05-01), Lee et al.
Lee Tien-Yu
Wu Chia-Hao
Lee Calvin
Lite-On Technology Corp.
Rosenberg , Klein & Lee
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