Light emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S079000, C257S099000, C257S100000, C257SE25028, C257SE25032

Reexamination Certificate

active

07812361

ABSTRACT:
A light emitting diode includes a substrate, a reflecting layer, an active layer, a transparent electrode, a first photonic crystal structure, and a second photonic crystal structure. The reflecting layer is disposed on the substrate. The active layer is disposed on the reflecting layer. The transparent electrode is disposed on the active layer and includes an upper surface and a lower surface. The lower surface of the transparent electrode combines with the active layer. The first photonic crystal structure is formed on the upper surface of the transparent electrode. The second photonic crystal structure formed in the active layer.

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patent: 2008/0061304 (2008-03-01), Huang et al.
patent: 1905219 (2007-01-01), None
patent: 200603436 (2006-01-01), None
Zhen-Feng Xu, Design of a high extraction light-emitting diode with two crossed grating structures, 2006 Proceedings of 2006 National photovoltaic technology symposium, Aug. 7, 2006, 693-697, vol. F, China.

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