Light-emitting diode

Details Light-emitting diode Light-emitting diode

2005-05-16

2010-02-09

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S098000

Reexamination Certificate

active

07659555

ABSTRACT:
A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode has a metal substrate, a first transparent conductive layer, a first contact layer, and an illuminating epitaxial structure stacked in sequence. An ohmic contact layer is located on a portion of the illuminating epitaxial structure. A thickness of the metal substrate is greater than 40 μm. The first contact layer is a doped strained-layer-superlattices (SLS) structure. Additionally, the light-emitting diode can further be a reflective layer located between the metal substrate and the first transparent conductive layer.

REFERENCES:
patent: 6563141 (2003-05-01), Dawson et al.
patent: 2003/0164503 (2003-09-01), Chen

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