Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-08-30
2011-08-30
Sefer, Ahmed (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S081000, C257S082000, C257S098000, C257S099000, C257SE33066, C257SE33074, C257SE33075
Reexamination Certificate
active
08008646
ABSTRACT:
A light emitting diode is disclosed, wherein the light extraction efficiency of a device can be enhanced by forming patterns on a substrate, a light emitting structure is formed on the substrate formed with the patterns, the substrate is removed from the light emitting structure, and patterns corresponding to those formed on the substrate are formed on the light emitting structure.
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LG Electronics Inc.
LG Innotek Co. Ltd.
McKenna Long & Aldridge LLP
Sefer Ahmed
LandOfFree
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