Light emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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Details

C257S081000, C257S082000, C257S098000, C257S099000, C257SE33066, C257SE33074, C257SE33075

Reexamination Certificate

active

08008646

ABSTRACT:
A light emitting diode is disclosed, wherein the light extraction efficiency of a device can be enhanced by forming patterns on a substrate, a light emitting structure is formed on the substrate formed with the patterns, the substrate is removed from the light emitting structure, and patterns corresponding to those formed on the substrate are formed on the light emitting structure.

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