Light-emitting diode

Details Light-emitting diode Light-emitting diode

1996-04-12

1997-12-16

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 99, 257103, H01L 3300

Patent

active

056988656

ABSTRACT:
The light-emitting diode consists of a substrate and a light-emission-generating layer located on the substrate and embedded between the cladding layers of a double heterostructure. On the top cladding layer, a current diffusion layer is located on which there is a further contact layer structure. The current diffusion layer is sufficiently thin so as to hardly absorb any light-emission. Thus, it can be economically produced by means of the MOCVD process. At the same time, the contact layer structure is provided with branched and finger-type electrodes for distributing the current together with the current diffusion layer onto the surface of the light-emission-generating layer. However, the structural size of the branched and finger-type electrodes is selected such that these can still be manufactured by the standard processes used in LED manufacture.

REFERENCES:
patent: 4499656 (1985-02-01), Fabian et al.
patent: 4864370 (1989-09-01), Gaw et al.
patent: 5049954 (1991-09-01), Shimada et al.
patent: 5309001 (1994-05-01), Watanabi
patent: 5359209 (1994-10-01), Huang

Affiliated with

Also associated with

Rating

Light-emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light-emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-209348