Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-02-04
2008-01-08
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000
Reexamination Certificate
active
07317212
ABSTRACT:
The present invention relates to a light emitting diode. According to the present invention, a structure capable of reducing total reflection of light, including micro-lenses or projections made of a material with a refractive index different from that of a semiconductor layer in the vicinity of an active layer, is formed within or on the surface of the semiconductor layer in the vicinity of an active layer so that light generated in an active layer of the light emitting diode can be efficiently extracted to enhance luminance.
REFERENCES:
patent: 3981023 (1976-09-01), King et al.
patent: 6465808 (2002-10-01), Lin
patent: 7071494 (2006-07-01), Steigerwald et al.
Ked & Associates LLP
LG Electronics Inc.
Prenty Mark V.
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