Light emitting diode

Details Light emitting diode Light emitting diode

2006-12-19

2006-12-19

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S014000, C257SE33069

Reexamination Certificate

active

07151282

ABSTRACT:
A green LED has a substrate, a GaN heavily n-doped bottom confining layer, an active region, an upper GaN confinement layer, and a semi-transparent ohmic contact layer. The active region has less than or equal to three highly compressively strained quantum wells. The widths of the quantum wells is less than 3 nm. The active region arrangement provides a short free carrier life-time and hence an increase in the modulation bandwidth of the LED.

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