Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-10-03
2006-10-03
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257S081000, C257S094000, C257S099000, C257S103000
Reexamination Certificate
active
07115915
ABSTRACT:
A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a second transparent conductive layer stacked in sequence, and an electrode located on a portion of the second transparent conductive layer. A thickness of the metal substrate is between 30 μm and 150 μm. In addition, the light-emitting diode can further comprises a supporting substrate and an adhesive layer. The adhesive layer is located between the supporting substrate and the metal substrate to adhere the supporting substrate onto the metal substrate.
REFERENCES:
patent: 6316792 (2001-11-01), Okazaki et al.
patent: 6555405 (2003-04-01), Chen et al.
patent: 6969626 (2005-11-01), Guo et al.
patent: 2004/0104395 (2004-06-01), Hagimoto et al.
Chang Chia-Sheng
Chen Wei-Shou
Chen Yen-Wei
Lo Hsin-Ming
Shei Shih-Chang
Epitech Technology Corporation
Glenn Michael A.
Glenn Patent Group
Louie Wai-Sing
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