1975-11-28
1978-04-25
Miller, Jr., Stanley D.
357 16, H01L 3300
Patent
active
040866084
ABSTRACT:
A light emitting diode with emission wavelength in the 1.06.mu.m region suitable for use with the 1.06.mu.m transmission window in optical fibers. The diode is fabricated by liquid phase epitaxial growth of p and n type InAs.sub.x P.sub.1-x layers on InP substrates.
REFERENCES:
patent: 3560275 (1971-02-01), Kressel et al.
patent: 3676228 (1972-07-01), Sakurai et al.
patent: 3875451 (1975-04-01), Bachmann et al.
patent: 3982261 (1976-09-01), Antypas
B. Ross et al., "Optical Amplification of 1.06.mu. In As.sub.1-x P.sub.x ection-Laser Emission", IEEE J. of Quantum Electronics, vol. QE-6, No. 6, June 1970, pp.361-366.
James et al., "Optimization of the InAs.sub.x P.sub.1-x -Cs.sub.2 O Photocathode", J. Appl. Phys., vol. 42, No. 2, Feb. 1971, pp. 580-586.
Mabbitt et al., "High-speed high-power 1.06 .mu.m gallium-indium-arsenide light emitting diodes", Electronic Letters, vol. 11, No. 8, pp. 157-158, Apr. 1975.
Clawson Arthur R.
Wieder Herman H.
Davie James W.
Miller, Jr. Stanley D.
Phillips T. M.
Rubens G. J.
Sciascia R. S.
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