Light emitting diode

Details Light emitting diode Light emitting diode

2005-03-08

2005-03-08

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S079000, C438S022000

Reexamination Certificate

active

06864514

ABSTRACT:
A light emitting diode having, at least, an AlGaInP light emitting layer and a transparent electrode, wherein the transparent electrode is made of a ZnO film doped with a group III element or a compound thereof.

REFERENCES:
patent: 5952778 (1999-09-01), Haskal et al.
patent: 20020013008 (2002-01-01), Sanaka et al.
patent: 20030059972 (2003-03-01), Ikeda et al.
patent: 11-004020 (1999-01-01), None
patent: 11-017220 (1999-01-01), None

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