Light emitting diode

Details Light emitting diode Light emitting diode

1981-09-21

1984-05-08

Edlow, Martin H.

357 16, H01L 3300

Patent

active

044478224

ABSTRACT:
A light emitting diode designed to emit primarily at 1.3 microns comprises a crystal having a plurality of lattice matched layers including an n-type indium phosphide front surface layer, an n-type indium phosphide buffer layer, a p-type indium gallium arsenide phosphide active layer, a p-type indium phosphide confining layer and an indium gallium arsenide back surface layer, and an annular front contact and a limited area back contact to the crystal.

REFERENCES:
patent: 4233090 (1980-11-01), Hawrylo
patent: 4355396 (1982-10-01), Hawrylo
patent: 4359774 (1983-08-01), Olsen
patent: 4374390 (1983-02-01), Lee
Appl. Phys. Lett., vol. 33, No. 4, Aug. 15, 1978, pp. 314-316.
Appl. Phys. Lett., vol. 36, No. 6, Mar. 15, 1980, pp. 444-446.
Japanese Journal of Applied Physics, vol. 19, No. 8, Aug. 1980, pp. L495-L497.

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