Light emitting diode

Details Light emitting diode Light emitting diode

1984-09-06

1987-07-14

Davie, James W.

357 16, H01L 3300

Patent

active

046806024

ABSTRACT:
A high output light emitting diode (LED) includes an active layer of GaAsP and a window layer formed of either InGaP or InGaAsP. An LED having this structure has an enhanced optical output, and can be manufactured easily and at low cost.

REFERENCES:
Applied Physics Letters, vol. 43, No. 11, Dec. 1, 1983, "High Efficient GaAlAs Light-Emitting Diodes of 660 nm With a Double Heterostructure on a GaAlAs Substrate," Ishigmo et al.

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