Light-emitting diode

Details Light-emitting diode Light-emitting diode

1996-08-29

1997-09-09

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257101, H01L 3300

Patent

active

056659849

ABSTRACT:
A light-emitting diode comprises a first layer of Si-doped N-type Ga.sub.1-x Al.sub.x As, a second layer of Si-doped P-type Ga.sub.1-y Al.sub.y As and a third layer of P-type Ga.sub.1-z Al.sub.z As, in that order, in which the first and third layers have a higher Al concentration than the second layer, an Al concentration in the second layer decreases going from a first layer side to a third layer side, an Al concentration in a portion of the second layer in contact with the third layer is higher than an Al concentration value in a portion of the second layer in contact with the first layer minus 0.06, the second layer is formed to a thickness of approximately 8 .mu.m to 50 .mu.m, and light emission is via the first layer.

REFERENCES:
patent: 3914785 (1975-10-01), Ketchow
patent: 5323027 (1994-06-01), Yamada et al.
patent: 5432359 (1995-07-01), Sekiwa et al.
"High-efficiency Graded-band-gap GA.sub.1-x Al.sub.x As Light-emitting Diodes"; Dawson, Ralph L.; Journal of Applied Physics, vol. 48, No. 6; Jun. 1977.

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