Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1993-12-06
1994-09-13
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257 76, 257 79, 257 80, H01L 3300, H01L 3112, H01L 3116, H01L 4900
Patent
active
053471474
ABSTRACT:
A light emitting electronic device has a substrate of transparent intrinsic diamond material with a p-type region formed in it by implantation of boron ions. Discrete transparent layers of diamond material are deposited over the p-type region, each with different electric characteristics. Transparent conductive contacts are formed above the transparent layers, which are separated by a transparent insulation layer, and a conductive contact is applied to the p-type region of the substrate. The different regions of the device emit different colours of light. Various different embodiments and methods of making the device are described.
REFERENCES:
patent: 5034784 (1991-07-01), Yamazaki
patent: 5086294 (1992-02-01), Kasegi
patent: 5115147 (1992-05-01), Kusano et al.
Jackson Jerome
Martin Wallace Valencia
LandOfFree
Light emitting diamond device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting diamond device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diamond device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1122348