Light emitting devices with inhomogeneous quantum well...

Details Light emitting devices with inhomogeneous quantum well... Light emitting devices with inhomogeneous quantum well...

2010-04-07

2011-11-01

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S046000, C257SE21090, C257S015000, C257S079000, C257S088000

Reexamination Certificate

active

08048703

ABSTRACT:
A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer.

REFERENCES:
patent: 2005/0116216 (2005-06-01), Harle et al.
patent: 2005/0213436 (2005-09-01), Ono et al.

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