Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-10-02
2007-10-02
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257SE33073
Reexamination Certificate
active
11328964
ABSTRACT:
A device includes a light emitting semiconductor device bonded to an optical element. In some embodiments, the optical element may be elongated or shaped to direct a portion of light emitted by the active region in a direction substantially perpendicular to a central axis of the semiconductor light emitting device and the optical element. In some embodiments, the semiconductor light emitting device and optical element are positioned in a reflector or adjacent to a light guide. The optical element may be bonded to the first semiconductor light emitting device by a bond at an interface disposed between the optical element and the semiconductor light emitting device. In some embodiments, the bond is substantially free of organic-based adhesives.
REFERENCES:
patent: 3769536 (1973-10-01), Antypas et al.
patent: 4391683 (1983-07-01), Buckley et al.
patent: 4675058 (1987-06-01), Plaster
patent: 4689652 (1987-08-01), Shimada et al.
patent: 4815084 (1989-03-01), Scifres et al.
patent: 4983009 (1991-01-01), Musk
patent: 4988579 (1991-01-01), Tomomura et al.
patent: 5040868 (1991-08-01), Waitl et al.
patent: 5055892 (1991-10-01), Gardner et al.
patent: 5130531 (1992-07-01), Ito et al.
patent: 5132430 (1992-07-01), Gaudiana et al.
patent: 5255171 (1993-10-01), Clark
patent: 5317170 (1994-05-01), Paoli
patent: 5336644 (1994-08-01), Akhtar et al.
patent: 5376580 (1994-12-01), Kish et al.
patent: 5418384 (1995-05-01), Yamana et al.
patent: 5502316 (1996-03-01), Kish et al.
patent: 5528057 (1996-06-01), Yanagase et al.
patent: 5553089 (1996-09-01), Seki et al.
patent: 5606181 (1997-02-01), Sakuma et al.
patent: 5661316 (1997-08-01), Kish et al.
patent: 5663109 (1997-09-01), Dietz et al.
patent: 5698452 (1997-12-01), Goossen
patent: 5724376 (1998-03-01), Kish, Jr. et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5793062 (1998-08-01), Kish, Jr. et al.
patent: 5837561 (1998-11-01), Kish, Jr. et al.
patent: 5875205 (1999-02-01), Spaeth et al.
patent: 5898185 (1999-04-01), Bojarczuk, Jr. et al.
patent: 5917201 (1999-06-01), Ming-Jiunn et al.
patent: 5925898 (1999-07-01), Späth
patent: 5966399 (1999-10-01), Jiang et al.
patent: 6015719 (2000-01-01), Kish, Jr. et al.
patent: 6075627 (2000-06-01), Feldman et al.
patent: 6091020 (2000-07-01), Fairbanks et al.
patent: 6091694 (2000-07-01), Späth
patent: 6155699 (2000-12-01), Miller et al.
patent: 6165911 (2000-12-01), Calveley
patent: 6214733 (2001-04-01), Sickmiller
patent: 6233267 (2001-05-01), Nurmikko et al.
patent: 6258699 (2001-07-01), Chang et al.
patent: 6412971 (2002-07-01), Wojnarowski et al.
patent: 6429462 (2002-08-01), Shveykin
patent: 6469785 (2002-10-01), Duveneck et al.
patent: 6483196 (2002-11-01), Wojnarowski et al.
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 6598998 (2003-07-01), West et al.
patent: 6784463 (2004-08-01), Camras et al.
patent: 7053419 (2006-05-01), Camras et al.
patent: 2002/0030194 (2002-03-01), Camras et al.
patent: 2002/0141006 (2002-10-01), Pocius et al.
patent: 2003/0227249 (2003-12-01), Mueller et al.
patent: 2003/0230757 (2003-12-01), Suehiro et al.
patent: 2004/0051106 (2004-03-01), Baur et al.
patent: 393416 (1990-10-01), None
patent: 0926744 (1999-06-01), None
patent: 09153645 (1997-06-01), None
patent: 09167515 (1997-06-01), None
patent: WO 00/69000 (2000-11-01), None
patent: WO 00/70687 (2000-11-01), None
patent: WO 01/41219 (2001-06-01), None
patent: WO 01/41225 (2001-06-01), None
patent: WO 01/80322 (2001-10-01), None
patent: WO 02/37578 (2002-05-01), None
Chui et al., “High-Efficiency AlGalnP Light-Emitting Diodes”, Semiconductor And Semimetals, vol. 64, Chapter 2, pp. 49-128.
Babic et al., “Room-Temperature Continuous-Wave Operation of 1.54-μm Vertical-Cavity Lasers”, IEEE Photonics Technology Letters, vol. 7, No. 11, Nov. 1995, pp. 1225-1227.
Chua et al., “Dielectrically-Bonded Long Wavelength Vertical Cavity Laser on GaAs Substrates Using Strain-Compensated Multiple Quantum Wells”, IEEE Photonics Technology Letters, vol. 6, No. 12, Dec. 1994, pp. 1400-1402.
Fischer et al., “Highly Refractive Glasses to Improve Electroluminescent Diode Efficiencies”, Journal of the Electrochemical Society: Solid State Science, Dec. 1969, pp. 1718-1722.
Carr, “Photometric Figures of Merit for Semiconductor Luminescent Sources Operating in Spontaneous Mode”, Infrared Physics, 1966, vol. 6, pp. 1-19.
Mary T. Strzelecki et al., “Low Temperature Bonding of Glasses and Glass Ceramics”, 8 pages.
Robert D. Simpson et al., “Hybrid Glass Structures For Telecommunication Applications”, 8 pages.
Joseph S. Hayden, Passive and Active Characterization of Hybrid Glass Substrates for Telecommunication Applications, 8 pages.
J.W. Osenbach, et al., Low Cost/High Volume Laser Modules Using Silicon Optical Bench Technology, 1998 Electronic Components and Technology Conference, p. 581.
Aluminum Oxide, AI203 For Optical Coating, CERAC, Inc. Technical Publications, pp. 1-4.
“Bulk Measurement”, Sairon Technology, Inc., pp. 1-3.
Thomas R. Anthony, “Dielectric isolation of silicon by anodic bonding”, J. Appl. Phys. vol. 58, No. 3, Aug. 1, 1985, pp. 1240-1247.
Joshua Israelsohn, “Switching the light fantastic”, Techtrends, EDN, Oct. 26, 2000, 10 pages.
Boris A. Matveev et al., “III-V Optically Pumped Mid-IR LEDs,” Light-Emitting Diodes: Research Manufacturing, and Applications, V.H. Walter Yao, E. Fred Schubert Editors, Proceedings of SPIE vol. 4278 (2001), pp. 189-196.
Camras Michael D.
Harbers Gerard
Imler William R.
Keuper Matthijs H.
Martin Paul S.
Patent Law Group LLP
Philips Lumileds Lighting Company LLC
Tran Minh-Loan
LandOfFree
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