Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2007-01-23
2007-01-23
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257S087000, C257S079000, C257S098000, C257S100000, C257S103000, C257SE25032, C257SE51022, C438S022000
Reexamination Certificate
active
10993342
ABSTRACT:
Light-emitting devices, and related components, systems and methods are disclosed.
REFERENCES:
patent: 3293513 (1966-12-01), Biard et al.
patent: 3739217 (1973-06-01), Bergh
patent: 3922706 (1975-11-01), Kaiser
patent: 4864370 (1989-09-01), Gaw et al.
patent: 5073041 (1991-12-01), Rastani
patent: 5126231 (1992-06-01), Levy
patent: 5132751 (1992-07-01), Shibata et al.
patent: 5162878 (1992-11-01), Sasagawa et al.
patent: 5359345 (1994-10-01), Hunter et al.
patent: 5363009 (1994-11-01), Monto
patent: 5376580 (1994-12-01), Kish
patent: 5426657 (1995-06-01), Vakhshoori
patent: 5453405 (1995-09-01), Fan et al.
patent: 5491350 (1996-02-01), Unno et al.
patent: 5528057 (1996-06-01), Yanagase
patent: 5600483 (1997-02-01), Fan et al.
patent: 5631190 (1997-05-01), Negley et al.
patent: 5633527 (1997-05-01), Lear
patent: 5724062 (1998-03-01), Hunter et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5793062 (1998-08-01), Kish et al.
patent: 5814839 (1998-09-01), Hosoba
patent: 5834331 (1998-11-01), Razeghi
patent: 5955749 (1999-09-01), Joannopoulos et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6072628 (2000-06-01), Sarayeddine
patent: 6091085 (2000-07-01), Lester
patent: 6122103 (2000-09-01), Perkins et al.
patent: 6222207 (2001-04-01), Carter-Coman et al.
patent: 6265820 (2001-07-01), Ghosh et al.
patent: 6287882 (2001-09-01), Chang et al.
patent: 6288840 (2001-09-01), Perkins et al.
patent: 6303405 (2001-10-01), Yoshida et al.
patent: 6307218 (2001-10-01), Steigerwald et al.
patent: 6335548 (2002-01-01), Roberts et al.
patent: 6340824 (2002-01-01), Komoto
patent: 6388264 (2002-05-01), Pace
patent: 6410348 (2002-06-01), Chen
patent: 6410942 (2002-06-01), Thibeault et al.
patent: 6420242 (2002-07-01), Cheung et al.
patent: 6426515 (2002-07-01), Ishikawa
patent: 6465808 (2002-10-01), Lin
patent: 6468824 (2002-10-01), Chen
patent: 6469324 (2002-10-01), Wang
patent: 6504180 (2003-01-01), Heremans et al.
patent: 6522063 (2003-02-01), Chen et al.
patent: 6534798 (2003-03-01), Scherer et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6573537 (2003-06-01), Steigerwald et al.
patent: 6574383 (2003-06-01), Erchak et al.
patent: 6593160 (2003-07-01), Carter-Coman et al.
patent: 6627521 (2003-09-01), Furukawa
patent: 6642618 (2003-11-01), Yagi
patent: 6649437 (2003-11-01), Yang et al.
patent: 6657236 (2003-12-01), Thibeault et al.
patent: 6661028 (2003-12-01), Chen
patent: 6690268 (2004-02-01), Schofield et al.
patent: 6740906 (2004-05-01), Slater, Jr. et al.
patent: 6742907 (2004-06-01), Funamoto et al.
patent: 6762069 (2004-07-01), Huang et al.
patent: 6777871 (2004-08-01), Duggal et al.
patent: 6778746 (2004-08-01), Charlton et al.
patent: 6784027 (2004-08-01), Streubel et al.
patent: 6784463 (2004-08-01), Camras et al.
patent: 6791117 (2004-09-01), Yoshitake
patent: 6791119 (2004-09-01), Slater, Jr. et al.
patent: 6791259 (2004-09-01), Stokes
patent: 6794684 (2004-09-01), Slater, Jr. et al.
patent: 6800500 (2004-10-01), Coman
patent: 6812503 (2004-11-01), Lin
patent: 6818531 (2004-11-01), Yoo
patent: 6825502 (2004-11-01), Okazaki et al.
patent: 6828597 (2004-12-01), Wegleiter
patent: 6828724 (2004-12-01), Burroughes
patent: 6831302 (2004-12-01), Erchak et al.
patent: 6847057 (2005-01-01), Gardner et al.
patent: 6849558 (2005-02-01), Schaper
patent: 6878969 (2005-04-01), Tanaka
patent: 6891203 (2005-05-01), Kozawa
patent: 6900587 (2005-05-01), Suehiro
patent: 6924136 (2005-08-01), Takada
patent: 6943379 (2005-09-01), Seuhiro
patent: 6958494 (2005-10-01), Lin
patent: 2002/0110172 (2002-08-01), Hasnain et al.
patent: 2003/0141507 (2003-07-01), Krames et al.
patent: 2003/0141563 (2003-07-01), Wang
patent: 2003/0143772 (2003-07-01), Chen
patent: 2003/0222263 (2003-12-01), Choi
patent: 2004/0027062 (2004-02-01), Shiang et al.
patent: 2004/0043524 (2004-03-01), Huang et al.
patent: 2004/0110856 (2004-06-01), Young et al.
patent: 2004/0130263 (2004-07-01), Horng
patent: 2004/0144985 (2004-07-01), Zhang et al.
patent: 2004/0182914 (2004-09-01), Venugopalan
patent: 2004/0206962 (2004-10-01), Erchak et al.
patent: 2004/0206971 (2004-10-01), Erchak et al.
patent: 2004/0207310 (2004-10-01), Erchak et al.
patent: 2004/0207319 (2004-10-01), Erchak et al.
patent: 2004/0207320 (2004-10-01), Erchak
patent: 2004/0207323 (2004-10-01), Erchak et al.
patent: 2004/0259279 (2004-12-01), Erchak et al.
patent: 2004/0259285 (2004-12-01), Erchak et al.
patent: 2005/0019971 (2005-01-01), Slater, Jr.
patent: 2005/0040424 (2005-02-01), Erchak et al.
patent: 2005/0051785 (2005-03-01), Erchak et al.
patent: 2005/0051787 (2005-03-01), Erchak et al.
patent: 2005/0059178 (2005-03-01), Erchak et al.
patent: 2005/0059179 (2005-03-01), Erchak et al.
patent: 2005/0082545 (2005-04-01), Wierer
patent: 2005/0087754 (2005-04-01), Erchak
patent: 2005/0087757 (2005-04-01), Erchak et al.
patent: 2005/0112886 (2005-05-01), Asakawa
patent: 2005/0127375 (2005-06-01), Erchak et al.
patent: 2005/0205883 (2005-09-01), Wierer
patent: WO 98/14986 (1998-04-01), None
patent: 02/41406 (2002-05-01), None
patent: 02/089221 (2002-07-01), None
patent: 02/071450 (2002-09-01), None
A. Köck et al., “Novel surface emitting GaAs/AlGaAs laser diodes based on surface mode emission,” Appl. Phys. Lett. 63 (9), Aug. 30, 1993, pp. 1164-1166.
A. Köck et al., “Strongly directional emission from AlGaAs/GaAs light-emitting diodes,” Appl. Phys. Lett. 57 (22), Nov. 26, 1990, pp. 2327-2329.
Wendt et al. “Nanofabrication of photonic lattice structures in GaAs/AlGaAs,” J. Vac. Sci. Technol. B 11 (6), Nov./Dec. 1993, pp. 2637-2640.
Gourley et al. “Optical properties of two-dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors,” Appl. Phys. Lett. 64 (6), Feb. 7, 1994, pp. 687-689.
W.S. Wong et al. “Damage-free separation of GaN thin films from sapphire substrates”, Appl. Phys. Lett. 72 (5), Feb. 2, 1998, pp. 599-601.
M.K. Kelly et al. “Optical process for liftoff of Group III-nitride films”, Physica Status Solidi; Rapid Research Note, Nov. 28, 1996, 2 pages.
A. A. Erchak et al. “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode”, Appl. Phys. Lett. (78 (5), Jan. 29, 2001, pp. 563-565.
P.L. Gourley et al. “Optical properties of two-dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors”, Appl. Phys. Lett. 64(6), Feb. 7, 1994, pp. 687-689.
P.L. Gourley et al. “Optical Bloch waves in a semiconductor photonic lattice”, Appl. Phys. Lett. 60 (22), Jun. 1, 1992, pp. 2714-2716.
J.R. Wendt et al. “Nanofabrication of photonic lattice structures in GaAs/AlGaAs”, J.Vac. Sci. Technol. B 11(6), Nov./Dec. 1993, pp. 2637-2640.
M. Krames et al “Introduction to the Issue on High-Efficiency Light-Emitting Diodes”, IEEE Journal on selected topic in quantum electronics, vol. 8, No. 2 Mar./Apr. 2002, pp. 185-188.
K. Streubel et al.. “High Brightness AlGaInP Light-Emitting Diodes”, IEEE Journal on selected topic in quantum electronics, vol. 8, No. 2, Mar./Apr. 2002, pp. 321-332.
M. Okai et al. “Novel method to fabricate corrugation for a λ/4-shifted distributed feedback laser using a granting photomask”, Appl. Phys. Lett. 55(5), Jul. 31, 1989, pp. 415-417.
T.L. Koch et al. “1.55-μ InGaAsP distributed feedback vapor phase transported buried heterostructure lasers”, Appl. Phys. Lett. 47 (1), Jul. 1, 1985, pp. 12-14.
W.T. Tsang et al. “Semiconductor distributed feedback lasers with quantum well or superlattice grating for index or gain-coupled optical feedback”, Appl. Phys. Lett. 60 (21), May 25, 1992, pp. 258-2582.
M. Zelsmann et al. “Seventy-fold enhancement of light extraction from a defectless photonic crystal made on silicon-on-insulator”, Appl. Phys. Lett. 83 (13), Sep. 29, 2003, pp. 2542-2544.
M. Rattier et al. “Omnidirectional and compact guided light extraction from
Erchak Alexei A.
Lidorikis Eleftrios
Luo Chiyan
Andujar Leonardo
Luminus Devices, Inc.
Wilson Scott R.
Wolf Greenfield & Sack P.C.
LandOfFree
Light emitting devices with improved extraction efficiency does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting devices with improved extraction efficiency, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting devices with improved extraction efficiency will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3770568