Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2005-08-23
2005-08-23
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S079000, C257S094000, C257S095000, C257S098000, C257S099000, C257S100000, C257S103000, C313S501000, C313S502000, C313S503000
Reexamination Certificate
active
06933535
ABSTRACT:
A structure includes semiconductor light emitting device and a wavelength converting layer. The wavelength converting layer converts a portion of the light emitted from the semiconductor light emitting device. The dominant wavelength of the combined light from the semiconductor light emitting device and the wavelength converting layer is essentially the same as the wavelength of light emitted from the device. The wavelength converting layer may emit light having a spectral luminous efficacy greater than the spectral luminous efficacy of the light emitted from the device. Thus, the structure has a higher luminous efficiency than a device without a wavelength converting layer.
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Collins III William D.
Fletcher Robert M.
Ludowise Michael J.
Posselt Jason L.
Steigerwald Daniel A.
Huynh Andy
Leiterman Rachel V.
Lumileds Lighting U.S. LLC
Patent Law Group LLP
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