Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-05-31
2005-05-31
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000
Reexamination Certificate
active
06900474
ABSTRACT:
A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25λnand has a portion located between about 0.6λnand 0.75λnfrom the electrode, where λnis the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6λnand 0.75λnfrom the electrode and a portion of a second cluster located between about 1.2λnand 1.35λnfrom the electrode.
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Euroepan Search Report, 3 pages.
Misra Mira S.
Shen Yu-Chen
Stockman Stephen A.
Farahani Dana
Leiterman Rachel V.
Lumileds Lighting U.S. LLC
Patent Law Group LLP
Pham Hoai
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