Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-12-21
2010-10-12
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S098000, C438S027000, C438S029000, C438S065000, C438S069000
Reexamination Certificate
active
07812421
ABSTRACT:
According to one described embodiment, a light emitting device structure includes an epitaxial contact layer disposed on an active region of the light emitting device structure, a multi-layer reflector disposed at least partially on the epitaxial contact layer, and conductive contacts abutting the epitaxial contact layer, the multi-layer reflector enclosing the conductive contacts.
REFERENCES:
patent: 7078735 (2006-07-01), Shono et al.
Chua Christopher L.
Knollenberg Clifford
Teepe Mark R.
Yang Zhihong
Marger & Johnson & McCollom, P.C.
Palo Also Research Center Incorporated
Toledo Fernando L
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