Light emitting devices with an electrically active top...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S098000, C438S027000, C438S029000, C438S065000, C438S069000

Reexamination Certificate

active

07812421

ABSTRACT:
According to one described embodiment, a light emitting device structure includes an epitaxial contact layer disposed on an active region of the light emitting device structure, a multi-layer reflector disposed at least partially on the epitaxial contact layer, and conductive contacts abutting the epitaxial contact layer, the multi-layer reflector enclosing the conductive contacts.

REFERENCES:
patent: 7078735 (2006-07-01), Shono et al.

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