Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-01-11
2011-01-11
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S079000, C257S100000, C438S022000
Reexamination Certificate
active
07868343
ABSTRACT:
A light-emitting device includes an active region that is configured to emit light responsive to a voltage applied thereto. A first encapsulation layer at least partially encapsulates the active region and includes a matrix material and nanoparticles, which modify at least one physical property of the first encapsulation layer. A second encapsulation layer at least partially encapsulates the first encapsulation layer.
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International Search Report and The Written Opinion of the International Searching Authority for International Patent Application No. PCT/US/2005/011592 mailed on Sep. 23, 2005.
Negley Gerald H.
Tarsa Eric
Cree Inc.
Myers Bigel & Sibley & Sajovec
Nguyen Joseph
Parker Kenneth A
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