1979-05-22
1980-07-08
Edlow, Martin H.
357 18, 357 55, H01L 3300
Patent
active
042120217
ABSTRACT:
In a prior-art injection type light emitting device which is constructed so that a predetermined range of a p-n junction formed by a semiconductor substrate and an epitaxial layer provided thereon may radiate, a radiation region in the p-n junction becomes larger in area than the region into which current is introduced, on account of the current spreading phenomenon. The construction of a light emitting device free from the phenomenon and a method for manufacturing the light emitting device are disclosed.
REFERENCES:
patent: 3984262 (1976-10-01), Burnham
patent: 4010483 (1977-03-01), Liu
patent: 4017881 (1977-04-01), Ono
Ito Kazuhiro
Kawata Masahiko
Kurata Kazuhiro
Mori Mitsuhiro
Morioka Makoto
Edlow Martin H.
Hitachi , Ltd.
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