Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-09-18
2011-10-25
Ho, Hoang-Quan (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33061, C257SE33068, C438S029000, C065S038000, C065S043000
Reexamination Certificate
active
08044421
ABSTRACT:
A light emitting device is provided, comprising a light emitting diode10, where the light emitting surface11thereof is bound to an optical element13by means of a bonding material12comprising a phosphate glass or an oxide glass having Tg<250° C. In operation of the device, when the temperature approaches or exceeds Tg of the bonding material, the bonding material gets fluidic and can thus relax any thermally induced stresses between the light emitting diode and the optical element.
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T. Banu et al; “Preparation, Characterisation, Optical, Thermal and Conductivity Studies of Lead Oxyfluoride Glasses”, Phys. Chem. Glasses, Sheffield, GB, Dec. 2005, vol. 46, No. 6, pp. 564-569, XP001500789.
Beckers Lucas J. A. M.
Offermans Paulus H. G.
Ho Hoang-Quan
Koninklijke Philips Electronics , N.V.
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