Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-09-20
2011-11-08
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33068, C257SE33072
Reexamination Certificate
active
08053797
ABSTRACT:
The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.
REFERENCES:
patent: 5813753 (1998-09-01), Vriens et al.
patent: 6155699 (2000-12-01), Miller et al.
patent: 7148514 (2006-12-01), Seo et al.
patent: 2004/0252509 (2004-12-01), Lin
Cheng Wei-Kang
Chu Yin-Cheng
Huang Cheng-Kuo
Huang Kuo-Chin
Pan Shyi-Ming
Blum David S
Chow Ming
Formosa Epitaxy Incorporation
Sinorica LLC
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