Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2008-09-09
2009-06-23
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S102000, C257SE33013
Reexamination Certificate
active
07550779
ABSTRACT:
A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
REFERENCES:
patent: 6888175 (2005-05-01), Wang et al.
patent: 2002/0064684 (2002-05-01), Seo
patent: 2004/0109328 (2004-06-01), Dahl et al.
patent: 2007/0145394 (2007-06-01), Shimizu et al.
patent: 2007/0267711 (2007-11-01), Yamamoto et al.
patent: 2008/0061369 (2008-03-01), Shimizu et al.
patent: 2008/0079022 (2008-04-01), Yamamoto et al.
L.H. Yu et al., Electronic band of filled tetrahedral semiconductor LimgP and zinc-blende AIP;1, Apr. 2005, Solid State Communications 135 (2005) 124-128.
K. Kushida et al., Filled tetrahedral semiconductor Li3AIN2 studied with optical absorption: Application of interstitial insertion rule; Dec. 3, 2004, Physical Review B 70, 233303 (2004).
K. Kuriyama et al., Optical band gap of the filled tetrahedral semiconductor LiZnN; Feb. 15, 1994; Physical Review B. vol. 49, No. 7.
H.W.A.M. Rompa, et al., “Predicted Modifications in the Direct and Indirect Gaps of Tetrahedral Semiconductors”, Physical Review Letters, vol. 52, No. 8, Feb. 20, 19894, pp. 675-678.
D.M. Wood, et al., “Eletronic structure of filled tetrahedral semiconductors”, Physical Review B, vol. 31, No. 4, Feb. 15, 1985, pp. 2750-2573.
N. Buerger, et al., “New Class of Related Optical Defects in Silicon Implanted with the Noble Gases He, Ne, Ar, Kr, and Xe”, Physical Review Letters, vol. 52, No. 18, Apr. 30, 1984, pp. 1645-1648.
Der-Gao Lin and Timothy Rost “The Impact of Fluorine on CMOS Channel Length and Shallow Junction Formation”, IEEE 1993.
Haneda Shigeru
Shimizu Tatsuo
Yamamoto Kazushige
Kabushiki Kaisha Toshiba
Montalvo Eva Y.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pizarro Marcos D.
LandOfFree
Light emitting device with filled tetrahedral (FT)... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting device with filled tetrahedral (FT)..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting device with filled tetrahedral (FT)... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4074518