Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-07-04
2006-07-04
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S094000, C257S103000
Reexamination Certificate
active
07071494
ABSTRACT:
A light emitting device includes a substrate, a textured layer overlying the substrate, at least one III-nitride layer overlying the textured layer, and a substantially planar light emitting region. Devices incorporating scattering layers may be formed by several different methods. In a first method, an epitaxial layer is deposited then etched to form the textured layer. In a second method, a photomask is deposited and patterned to create openings in the photomask. The textured layer is then preferentially deposited in the openings formed in the photomask. In a third method, the textured layer is deposited under conditions that favor three-dimensional growth, then optionally annealed.
REFERENCES:
patent: 4971928 (1990-11-01), Fuller
patent: 5032893 (1991-07-01), Fitzgerald, Jr. et al.
patent: 5040044 (1991-08-01), Noguchi et al.
patent: 5373174 (1994-12-01), Yamamoto
patent: 5491350 (1996-02-01), Unno et al.
patent: 5652434 (1997-07-01), Nakamura et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5814839 (1998-09-01), Hosoba
patent: 5912477 (1999-06-01), Negley
patent: 5929467 (1999-07-01), Kawai et al.
patent: 5962875 (1999-10-01), Motoki et al.
patent: 6015979 (2000-01-01), Sugiura et al.
patent: 6046465 (2000-04-01), Wang et al.
patent: 6051849 (2000-04-01), Davis et al.
patent: 6091085 (2000-07-01), Lester
patent: 6111277 (2000-08-01), Ikeda
patent: 6133589 (2000-10-01), Krames et al.
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6229151 (2001-05-01), Takeuchi et al.
patent: 6291839 (2001-09-01), Lester
patent: 6316785 (2001-11-01), Nunoue et al.
patent: 6410942 (2002-06-01), Thibeault et al.
patent: 1 276 158 (2002-06-01), None
patent: WO 01/41225 (2001-06-01), None
X. Li et al., “Spatially Resolved Bank-Edge Emission From Partially Coaleseed GaN Pyramids Prepared By Epitaxial Lateral Overgrowth,” App. Phys. Lett., vol. 76, No. 21, pp. 3031-3033, (May 22, 2000).
Kitamura et al., “Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. vol. 34, No. 9B, pp. L1184-1186, (1995).
Kapolnek et al., “Selective area epitaxy of GaN for electron field emission devices,” J. Crystal Growth 170, pp. 340-343 (1997).
Patent Abstracts of Japan. Publication No. 10215029, publication date: Nov. 8, 1998, 2 pages.
Ju. Han, T-B. et al., “The Effect of H2on Morphology Evolution GaN Metalorganic Chemical Vapor Deposition,” Appl. Phys. Lett. 71 (21), Nov. 24, 1997, pp. 3114-3116.
Bhat Jérôme C.
Steigerwald Daniel A.
Crane Sara
Leiterman Rachel V.
Lumileds Lighting U.S. LLC
Patent Law Group LLP
LandOfFree
Light emitting device with enhanced optical scattering does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting device with enhanced optical scattering, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting device with enhanced optical scattering will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3577680