Light-emitting device with double intermediate layers...

Details Light-emitting device with double intermediate layers... Light-emitting device with double intermediate layers...

2009-06-19

2010-12-28

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S045012, C372S046010

Reexamination Certificate

active

07860140

ABSTRACT:
A light-emitting device that reduces the leak current flowing along the sides of the mesa stripe is disclosed. The device provides the mesa stripe, the current blocking layer, and two intermediate layers put between the mesa stripe and the current blocking layer. One of intermediate layers has the p-type conduction and comes in directly contact with the mesa stripe, while, the other intermediate layer has the n-type conduction and put between the former intermediate layer and the current blocking layer. The double intermediate layers prevent impurities in the current blocking layer and in the mesa stripe from inter-diffusing each other.

REFERENCES:
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patent: 2001-298240 (2001-10-01), None
Nordell et al., “Movpe Regrowth of Semi-Insulating InP Around Reactive Ion Etched Laser Mesas”, Electronic Letters, May 3, 1991, vol. 27, No. 11, pp. 926-927.
Matsumoto et al., “Highly reliable 1.55μm GaInAsP laser diodes buried . . . iron-doped InP”, Electronic Letters, Aug. 4, 1994, vol. 30, No. 16, pp. 1350-1306.
Higashi et al., “High-Temperature CW Operation of InGaAsP-InP . . . Technique”, IEE Photonics Technology Letters, vol. 7, No. 8, Aug. 1995, pp. 828-829.

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