Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1992-05-29
1994-06-21
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257101, 372 43, 372 44, 372 45, H01L 3300
Patent
active
053230272
ABSTRACT:
In a light emitting device comprising a first clad layer composed of a mixed crystal compound semiconductor of first type conductivity, an active layer composed of a mixed crystal compound semiconductor of first type conductivity which has the mixed crystal ratio required to emit the prescribed wavelength, and a second clad layer composed of a mixed crystal compound semiconductor of second type conductivity which has a mixed crystal ratio equivalent to that of the first clad layer, the active layer is sandwiched by the first and second clad layers and forms the double hetero structure with the first and second clad layers, and the carrier concentration in the first clad layer near the junction with the active layer was made to be 5.times.10.sup.16 cm.sup.-3 or less. The carrier concentration in the active layer is preferably 1.times.10.sup.17 cm.sup.-3 or less, and the carrier concentration in the second clad layer is preferably 5.times.10.sup.16 cm.sup.-3 or more.
REFERENCES:
Watanabe et al., "Optical Tristability Using a Twin-Stripe Laser Diode," Applied Physics Letters, vol. 50, No. 8, Feb. 23, 1987, pp. 427-429.
Takenaka Takao
Yamada Masato
Mintel William
Shin-Etsu Handotai Kabushiki Kaisha
Snider Ronald R.
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