Light emitting device with disordered region

Details Light emitting device with disordered region Light emitting device with disordered region

1988-05-25

1990-02-27

Mintel, William

357 16, 357 4, 357 63, 357 91, H01L 3300

Patent

active

049050605

ABSTRACT:
A light emitting device has a multiple layer film structure such as a multiple quantum well (MQW) structure which is made of an indium system compound semiconductor not containing phosphorus, wherein part of a region or regions of the multiple film structure is (are) a disordered region or regions disordered by introduction of an inpurity.

REFERENCES:
patent: 4569721 (1986-02-01), Hayakawa et al.
patent: 4599728 (1989-04-01), Alavi et al.
patent: 4625226 (1986-11-01), Antell
patent: 4630083 (1986-12-01), Yamakoshi
patent: 4712219 (1987-12-01), Yano et al.
Fukuzawa et al, "GaAlAs Buried Multiquantum Well Lasers Fabricated by Diffusion-Induced Disordering," Appl. Phys. Lett. 45(1), Jul. 1, 1984, pp. 1-3.

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