Light emitting device with cap layer

Details Light emitting device with cap layer Light emitting device with cap layer

1997-04-25

1999-11-23

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257103, 372 45, 372 46, H01L 3300

Patent

active

059904968

ABSTRACT:
A light emitting device includes a cladding layer composed of a III-V group nitride system semiconductor of a first conductivity type, an active layer formed on the cladding layer of the first conductivity type and composed of a III-V group nitride system semiconductor containing In, an undoped cap layer formed on the active layer and composed of a III-V group nitride system semiconductor, and a cladding layer formed on the cap layer and composed of a III-V group nitride system semiconductor of a second conductivity type.

REFERENCES:
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5592501 (1997-01-01), Edmond et al.
patent: 5866440 (1999-02-01), Hata
Compound Semiconductor, p.7,-Jan./Feb. 1996.
Shuji Nakamura et al.; Appl. Phys. Lett. 69(10), pp. 1477-1479; Sep. 2, 1996.
Shuji Nakamura et al.; Jpn. J. Appl. Phys. vol. 35, pp. L74-L76, Part. 2, No. 1B; Jan. 15, 1996.
Shuji Nakamura et al.; Jpn. J. Appl. Phys. vol. 35, pp. L217-220, Part. 2, No. 2B; Jan. 15, 1996.

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