Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1994-03-15
1995-07-11
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257103, 372 45, H01L 3300
Patent
active
054323592
ABSTRACT:
A semiconductor light-emitting device and a manufacturing method therefor by which deterioration of external output is sufficiently suppressed under the high temperature and moisture so as to significantly improve pellet yield. A light emitting device of a double hetero structure, includes: a first GaAlAs clad layer of a first conductivity type; an active layer formed on the first clad layer, the active layer having an appropriate AlAs mixed crystal ratio relative to a GaAs crystal so that an emitted light wavelength from the device is substantially between 620 and 940 nm; and a second GaAlAs clad layer of a second conductivity type formed on the active layer, wherein the AlAs mixed crystal ratio on the surface thereof in the second clad layer is equal to or less than 0.67, and a difference of the AlAs mixed crystal ratio between the bottom layer of the first clad layer and the top layer of the second clad layer is equal to or less than 0.3.
REFERENCES:
patent: 5055893 (1991-10-01), Sasagawa
patent: 5073806 (1991-12-01), Idei
patent: 5172195 (1992-12-01), Sekiwa
"Ultra High Brightness Visible Light Emitting Diodes", Koike et al., Electronics Parts And Materials, Jan. 1983, pp. 138-141.
"Ultra-High-Brightness 2000 mcd LED And Characteristics", Terazima et al., Electronic Parts And Materials, Jul. 1983, pp. 81-83.
Fujiki Junichi
Sekiwa Tetsuo
Kabushiki Kaisha Toshiba
Mintel William
LandOfFree
Light emitting device with AlAs mixed crystal ratios does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting device with AlAs mixed crystal ratios, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting device with AlAs mixed crystal ratios will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-504989