Light-emitting device with a protection layer to prevent the...

Details Light-emitting device with a protection layer to prevent the... Light-emitting device with a protection layer to prevent the...

2008-06-18

2010-10-05

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S040000, C438S041000, C438S737000, C438S739000, C438S924000, C257SE21246, C257SE25032, C257SE31099, C257SE31105

Reexamination Certificate

active

07807489

ABSTRACT:
A light-emitting device with a protection layer for Zn inter-diffusion and a process to form the device are described. The device of the invention provides an active layer containing aluminum (Al) as a group III element, typically AlGaInAs, and protection layers containing silicon (Si) to prevent the inter-diffusion of zing (Zn) atoms contained in p-type layers surrounding the active layer. One of protection layers is put between the active layer and the p-type cladding layer, while, the other of protection layers is disposed between the active layer and the p-type burying layer.

REFERENCES:
patent: 4648940 (1987-03-01), Menigaux et al.
patent: 4972238 (1990-11-01), Tanaka
patent: 5253264 (1993-10-01), Suzuki et al.
patent: 6110756 (2000-08-01), Otsuka et al.
patent: 6618411 (2003-09-01), Takiguchi et al.
patent: 2004/0125843 (2004-07-01), Kawanishi et al.
patent: 2004/0213313 (2004-10-01), Akulova et al.
patent: 2005/0040413 (2005-02-01), Takahashi et al.
patent: 2002-26453 (2002-01-01), None

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