Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1996-06-27
1998-03-10
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 94, 257 99, 257101, H01L 3300
Patent
active
057264643
ABSTRACT:
A light emitting device comprises a luminous region comprising a luminous porous material comprising a crystalline semiconductor, and a non-porous region adjacent to the luminous region, wherein a conductive type between the regions is different at an interface between the luminous region and the non-porous region, and the crystal structure between the regions is continuous.
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Kumomi Hideya
Yonehara Takao
Canon Kabushiki Kaisha
Ngo Ngan V.
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