Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-03-20
2007-03-20
Mai, Anh D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S013000, C257S079000, C257S096000, C257S103000, C257SE33029
Reexamination Certificate
active
10517819
ABSTRACT:
A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer; an InxGa1—xN/InyGa1−yN super lattice structure layer formed above the first In-doped GaN layer; a first electrode contact layer formed above the InxGa1—xN/InyGa1−yN super lattice structure layer; an active layer formed above the first electrode contact layer and functioning to emit light; a second In-doped GaN layer; a GaN layer formed above the second In-doped GaN layer; and a second electrode contact layer formed above the GaN layer. The present invention can reduce crystal defects of the nitride based 3-5 group compound semiconductor light emitting device and improve the crystallinity of a GaN GaN based single crystal layer in order to improve the performance of the light emitting device and ensure the reliability thereof.
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Kunzer Brian E.
LG Innotek Co., Ltd
Mai Anh D.
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